Complexing agent effect on the stoichiometric ratio of the electrochemically prepared CuInSe2 thin films

S. Beyhan; S. Suzer; F. Kadirgan

doi:10.1016/j.solmat.2007.06.017

Complexing agent effect on the stoichiometric ratio of the electrochemically prepared CuInSe₂ thin films

S. Beyhan
, S. Suzer
, F. Kadirgan^*

^*Corresponding author for this work

Department of Chemistry

Bilkent University
Istanbul Technical University

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

The electrodeposition of CuInSe₂ is investigated to improve the stoichiometric properties of CuInSe₂ layers on indium tin oxide (ITO)-coated glass substrates and to develop one-step electrodeposition method for solar cell applications. XPS was utilized for the characterization of the surface properties of CuInSe₂ layers. The influence of the complexing agent, e.g. benzotriazole, bulk concentration of Cu and Se and deposition potentials on the stoichiometric properties, are discussed.

Original language	English
Pages (from-to)	1922-1926
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	91
Issue number	20
DOIs	https://doi.org/10.1016/j.solmat.2007.06.017
Publication status	Published - 14 Dec 2007

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CuInSe
Electrodeposition
Thin film solar cells

Access to Document

10.1016/j.solmat.2007.06.017

Cite this

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abstract = "The electrodeposition of CuInSe2 is investigated to improve the stoichiometric properties of CuInSe2 layers on indium tin oxide (ITO)-coated glass substrates and to develop one-step electrodeposition method for solar cell applications. XPS was utilized for the characterization of the surface properties of CuInSe2 layers. The influence of the complexing agent, e.g. benzotriazole, bulk concentration of Cu and Se and deposition potentials on the stoichiometric properties, are discussed.",

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T1 - Complexing agent effect on the stoichiometric ratio of the electrochemically prepared CuInSe2 thin films

AU - Beyhan, S.

AU - Suzer, S.

AU - Kadirgan, F.

PY - 2007/12/14

Y1 - 2007/12/14

N2 - The electrodeposition of CuInSe2 is investigated to improve the stoichiometric properties of CuInSe2 layers on indium tin oxide (ITO)-coated glass substrates and to develop one-step electrodeposition method for solar cell applications. XPS was utilized for the characterization of the surface properties of CuInSe2 layers. The influence of the complexing agent, e.g. benzotriazole, bulk concentration of Cu and Se and deposition potentials on the stoichiometric properties, are discussed.

AB - The electrodeposition of CuInSe2 is investigated to improve the stoichiometric properties of CuInSe2 layers on indium tin oxide (ITO)-coated glass substrates and to develop one-step electrodeposition method for solar cell applications. XPS was utilized for the characterization of the surface properties of CuInSe2 layers. The influence of the complexing agent, e.g. benzotriazole, bulk concentration of Cu and Se and deposition potentials on the stoichiometric properties, are discussed.

KW - CuInSe

KW - Electrodeposition

KW - Thin film solar cells

UR - https://www.scopus.com/pages/publications/34848817378

U2 - 10.1016/j.solmat.2007.06.017

DO - 10.1016/j.solmat.2007.06.017

M3 - Article

AN - SCOPUS:34848817378

SN - 0927-0248

VL - 91

SP - 1922

EP - 1926

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

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ER -