Compact low voltage high-Q CMOS active inductor suitable for RF applications

H. Ugur Uyanik; Nil Tarim

doi:10.1007/s10470-007-9065-5

Compact low voltage high-Q CMOS active inductor suitable for RF applications

H. Ugur Uyanik, Nil Tarim^*

^*Corresponding author for this work

Department of Electronics and Communication Engineering

Istanbul Technical University

Research output: Contribution to journal › Article › peer-review

71 Citations (Scopus)

Abstract

A compact active inductor circuit is proposed. The circuit is based on the gyrator-C approach with both transconductance stages realized by MOS transistors in common-source configuration. The circuit has minimal number of transistors, is suitable for low voltage operation, offers a wide inductive band, high quality factor and low power dissipation. Simulation results are provided for a 0.13 μm CMOS process with 1.2 V supply voltage.

Original language	English
Pages (from-to)	191-194
Number of pages	4
Journal	Analog Integrated Circuits and Signal Processing
Volume	51
Issue number	3
DOIs	https://doi.org/10.1007/s10470-007-9065-5
Publication status	Published - Jun 2007

Keywords

Active inductor
Low voltage
Quality factor
Radio-frequency integrated circuit

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10.1007/s10470-007-9065-5

Cite this

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title = "Compact low voltage high-Q CMOS active inductor suitable for RF applications",

abstract = "A compact active inductor circuit is proposed. The circuit is based on the gyrator-C approach with both transconductance stages realized by MOS transistors in common-source configuration. The circuit has minimal number of transistors, is suitable for low voltage operation, offers a wide inductive band, high quality factor and low power dissipation. Simulation results are provided for a 0.13 μm CMOS process with 1.2 V supply voltage.",

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AU - Tarim, Nil

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AB - A compact active inductor circuit is proposed. The circuit is based on the gyrator-C approach with both transconductance stages realized by MOS transistors in common-source configuration. The circuit has minimal number of transistors, is suitable for low voltage operation, offers a wide inductive band, high quality factor and low power dissipation. Simulation results are provided for a 0.13 μm CMOS process with 1.2 V supply voltage.

KW - Active inductor

KW - Low voltage

KW - Quality factor

KW - Radio-frequency integrated circuit

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Compact low voltage high-Q CMOS active inductor suitable for RF applications

Abstract

Keywords

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