Compact low voltage high-Q CMOS active inductor suitable for RF applications

H. Ugur Uyanik; Nil Tarim

doi:10.1007/s10470-007-9065-5

Compact low voltage high-Q CMOS active inductor suitable for RF applications

H. Ugur Uyanik, Nil Tarim^*

^*Corresponding author for this work

Department of Electronics and Communication Engineering

Istanbul Technical University

Research output: Contribution to journal › Article › peer-review

70 Citations (Scopus)

Abstract

A compact active inductor circuit is proposed. The circuit is based on the gyrator-C approach with both transconductance stages realized by MOS transistors in common-source configuration. The circuit has minimal number of transistors, is suitable for low voltage operation, offers a wide inductive band, high quality factor and low power dissipation. Simulation results are provided for a 0.13 μm CMOS process with 1.2 V supply voltage.

Original language	English
Pages (from-to)	191-194
Number of pages	4
Journal	Analog Integrated Circuits and Signal Processing
Volume	51
Issue number	3
DOIs	https://doi.org/10.1007/s10470-007-9065-5
Publication status	Published - Jun 2007

Keywords

Active inductor
Low voltage
Quality factor
Radio-frequency integrated circuit

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10.1007/s10470-007-9065-5

Cite this

@article{bdaf4726b7a145cca9622db018b35ea0,

title = "Compact low voltage high-Q CMOS active inductor suitable for RF applications",

abstract = "A compact active inductor circuit is proposed. The circuit is based on the gyrator-C approach with both transconductance stages realized by MOS transistors in common-source configuration. The circuit has minimal number of transistors, is suitable for low voltage operation, offers a wide inductive band, high quality factor and low power dissipation. Simulation results are provided for a 0.13 μm CMOS process with 1.2 V supply voltage.",

keywords = "Active inductor, Low voltage, Quality factor, Radio-frequency integrated circuit",

author = "Uyanik, {H. Ugur} and Nil Tarim",

year = "2007",

month = jun,

doi = "10.1007/s10470-007-9065-5",

language = "English",

volume = "51",

pages = "191--194",

journal = "Analog Integrated Circuits and Signal Processing",

issn = "0925-1030",

publisher = "Springer Netherlands",

number = "3",

}

TY - JOUR

T1 - Compact low voltage high-Q CMOS active inductor suitable for RF applications

AU - Uyanik, H. Ugur

AU - Tarim, Nil

PY - 2007/6

Y1 - 2007/6

N2 - A compact active inductor circuit is proposed. The circuit is based on the gyrator-C approach with both transconductance stages realized by MOS transistors in common-source configuration. The circuit has minimal number of transistors, is suitable for low voltage operation, offers a wide inductive band, high quality factor and low power dissipation. Simulation results are provided for a 0.13 μm CMOS process with 1.2 V supply voltage.

AB - A compact active inductor circuit is proposed. The circuit is based on the gyrator-C approach with both transconductance stages realized by MOS transistors in common-source configuration. The circuit has minimal number of transistors, is suitable for low voltage operation, offers a wide inductive band, high quality factor and low power dissipation. Simulation results are provided for a 0.13 μm CMOS process with 1.2 V supply voltage.

KW - Active inductor

KW - Low voltage

KW - Quality factor

KW - Radio-frequency integrated circuit

UR - http://www.scopus.com/inward/record.url?scp=34547738569&partnerID=8YFLogxK

U2 - 10.1007/s10470-007-9065-5

DO - 10.1007/s10470-007-9065-5

M3 - Article

AN - SCOPUS:34547738569

SN - 0925-1030

VL - 51

SP - 191

EP - 194

JO - Analog Integrated Circuits and Signal Processing

JF - Analog Integrated Circuits and Signal Processing

IS - 3

ER -

Compact low voltage high-Q CMOS active inductor suitable for RF applications

Abstract

Keywords

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