Coexistence of (2 x 1) and c(4 x 2) phases on Ge(001)

Harold J.W. Zandvliet; Raoul Van Gastel; Oguzhan Gurlu; Bene Poelsema

doi:10.1016/j.physleta.2004.04.056

Coexistence of (2 x 1) and c(4 x 2) phases on Ge(001)

Harold J.W. Zandvliet^*, Raoul Van Gastel, Oguzhan Gurlu, Bene Poelsema

^*Corresponding author for this work

University of Twente

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We found that the c(4×2) to (2×1) phase transition on Ge(001) occurs via an intermediate temperature range where both phases coexist in a well-ordered, one-dimensional domain pattern. A simple model that takes into account collective dynamic buckling of the surface dimers, strain relaxation energy and domain wall formation energy is presented.

Original language	English
Pages (from-to)	457-461
Number of pages	5
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	326
Issue number	5-6
DOIs	https://doi.org/10.1016/j.physleta.2004.04.056
Publication status	Published - 14 Jun 2004
Externally published	Yes

Keywords

03.40.Dz
68.35.Bs
68.35.Md

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10.1016/j.physleta.2004.04.056

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abstract = "We found that the c(4×2) to (2×1) phase transition on Ge(001) occurs via an intermediate temperature range where both phases coexist in a well-ordered, one-dimensional domain pattern. A simple model that takes into account collective dynamic buckling of the surface dimers, strain relaxation energy and domain wall formation energy is presented.",

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AU - Zandvliet, Harold J.W.

AU - Van Gastel, Raoul

AU - Gurlu, Oguzhan

AU - Poelsema, Bene

PY - 2004/6/14

Y1 - 2004/6/14

N2 - We found that the c(4×2) to (2×1) phase transition on Ge(001) occurs via an intermediate temperature range where both phases coexist in a well-ordered, one-dimensional domain pattern. A simple model that takes into account collective dynamic buckling of the surface dimers, strain relaxation energy and domain wall formation energy is presented.

AB - We found that the c(4×2) to (2×1) phase transition on Ge(001) occurs via an intermediate temperature range where both phases coexist in a well-ordered, one-dimensional domain pattern. A simple model that takes into account collective dynamic buckling of the surface dimers, strain relaxation energy and domain wall formation energy is presented.

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KW - 68.35.Md

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JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

IS - 5-6

ER -

Coexistence of (2 x 1) and c(4 x 2) phases on Ge(001)

Abstract

Keywords

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