Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique

G. Dolny*, N. Gollagunta, S. Suliman, L. Trabzon, M. Horn, O. O. Awadelkarim, S. J. Fonash, C. M. Knoedler, J. Hao, R. Ridley, C. Kocon, T. Grebs, J. Zeng

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

The high-electric-field stress reliability of trench-gated power MOSFETS has been characterized using high-resolution scanning electron microscopy, transistor parameter, and charge-pumping measurements. Degradation due to electrical stress was observed to be in the form of positive charge accumulation at the drain edge of the channel. This results in an effective shortening of the electrical channel length. Oxide thinning at the trench corners together with sidewall roughness caused by the trench etch are suggested as the mechanisms responsible for this observation. Design approaches to alleviate this effect are demonstrated.

Original languageEnglish
Pages431-434
Number of pages4
Publication statusPublished - 2001
Externally publishedYes
Event13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan
Duration: 4 Jun 20017 Jun 2001

Conference

Conference13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)
Country/TerritoryJapan
CityOsaka
Period4/06/017/06/01

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