Characterization of Cu₂ZnSnS₄ thin films deposited by one-step thermal evaporation for a third generation solar cell

Keyphrases

• Third Generation Solar Cells 100%
• Thermal Evaporation 100%
• Cu2ZnSnS4 Thin Films 100%
• TiO2 NRs 100%
• Annealing 66%
• CZTS Thin Films 66%
• Superstrate 66%
• CZTS Solar Cell 66%
• Fill Factor 33%
• Power Conversion Efficiency 33%
• Open-circuit Voltage 33%
• Short-circuit Current Density 33%
• Band Gap 33%
• Solar Cell 33%
• In Films 33%
• XRD Study 33%
• Ingot 33%
• Photovoltaic Applications 33%
• Annealing Temperature 33%
• Morphological Changes 33%
• Glass Substrate 33%
• AFM Measurements 33%
• Large-scale Production 33%
• One-dimensional Nanostructures 33%
• Device Application 33%
• Hydrothermal Method 33%
• Monophase 33%
• Cu-poor 33%
• N2 Atmosphere 33%
• Optical Measurement 33%
• Bridgman Method 33%
• Kesterite Structure 33%
• TiO2 Nanostructures 33%
• Phase-pure 33%
• Raman Studies 33%
• CZTS Films 33%
• Single Crystalline Cu 33%
• High Efficiency 33%

Material Science

• Thin Films 100%
• Titanium Dioxide 100%
• Solar Cell 100%
• Film 50%
• Electronic Circuit 50%
• Nanostructure 50%
• Morphology 25%
• X-Ray Diffraction 25%
• Density 25%
• Photovoltaics 25%
• Annealing 25%
• Optical Measurement 25%

Engineering

• One Step 100%
• Thin Films 100%
• Solar Cell 100%
• Nanomaterial 50%
• Open Circuit Voltage 25%
• Fill Factor 25%
• Short-Circuit Current Density 25%
• Power Conversion Efficiency 25%
• One Dimensional 25%
• Annealing Temperature 25%
• Photovoltaics 25%
• Band Gap 25%
• Glass Substrate 25%
• Mass Production 25%