Abstract
ZnO:Al/p-Si heterojunctions were fabricated by sol-gel dip coating technique onto p-type Si wafer substrates. Capacitance-Voltage (C-V) characteristics of ZnO:Al/p-Si heterojunctions were determined after the ZnO:Al thin film coated Si wafers were annealed at 700 and 800°C, respectively. C-V results indicate an abrupt interface.
| Original language | English |
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| Title of host publication | Diffusion in Solids and Liquids VIII |
| Publisher | Trans Tech Publications Ltd |
| Pages | 349-352 |
| Number of pages | 4 |
| Volume | 334-335 |
| ISBN (Print) | 9783037856628 |
| DOIs | |
| Publication status | Published - 2013 |
| Event | 8th International Conference on Diffusion in Solids and Liquids Mass Transfer - Heat Transfer - Microstructure and Properties - Nanodiffusion and Nanostructured Materials, DSL 2012 - Istanbul, Turkey Duration: 25 Jun 2012 → 29 Jun 2012 |
Conference
| Conference | 8th International Conference on Diffusion in Solids and Liquids Mass Transfer - Heat Transfer - Microstructure and Properties - Nanodiffusion and Nanostructured Materials, DSL 2012 |
|---|---|
| Country/Territory | Turkey |
| City | Istanbul |
| Period | 25/06/12 → 29/06/12 |
Keywords
- Capacitance-voltage characteristics
- Sol-gel
- Zinc oxide