Bridged oxide nanowire device fabrication using single step metal catalyst free thermal evaporation

Mustafa Coşkun; Matthew M. Ombaba; Fatih Dumludaǧ; Ahmet Altindal; M. Saif Islam

doi:10.1039/c7ra11987a

Bridged oxide nanowire device fabrication using single step metal catalyst free thermal evaporation

Mustafa Coşkun, Matthew M. Ombaba, Fatih Dumludaǧ, Ahmet Altindal, M. Saif Islam^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this study, indium-tin-zinc-oxide (ITZO) and Zn doped In₂O₃ nanowires were directly grown as bridged nanowires between two heavily doped silicon (Si) electrodes on an SOI wafer using single step vapor-solid-solid (VSS) growth method. SEM analysis showed highly dense and self aligned nanowire formation between the Si electrodes. Electrical and UV response measurements were performed in ambient condition. Current-voltage characteristics of devices exhibited both linear and non-linear behavior. This was the first demonstration of bridged ITZO and Zn-doped In₂O₃ nanowires. Our results show that bridged nanowire growth technique can be a potential candidate for high performance electronic and optoelectronic devices.

Original language	English
Pages (from-to)	10294-10301
Number of pages	8
Journal	RSC Advances
Volume	8
Issue number	19
DOIs	https://doi.org/10.1039/c7ra11987a
Publication status	Published - 2018
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2018 The Royal Society of Chemistry.

Funding

This work was supported by Scientic and Technological Research Council of Turkey (TUBITAK) Under BIDEB-2214A Program, 1002-short term project (project no: 113Z472) and Marmara University Scientic Research Council (BAP) (project no: FEN-C-DRP-110913-0379). Authors also would like to thank Jin Yong Oh for preparing SOI pattern.

Funders	Funder number
Marmara University Scientic Research Council
Scientic and Technological Research Council of Turkey
TUBITAK	113Z472
British Association for Psychopharmacology	FEN-C-DRP-110913-0379

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Cite this

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title = "Bridged oxide nanowire device fabrication using single step metal catalyst free thermal evaporation",

abstract = "In this study, indium-tin-zinc-oxide (ITZO) and Zn doped In2O3 nanowires were directly grown as bridged nanowires between two heavily doped silicon (Si) electrodes on an SOI wafer using single step vapor-solid-solid (VSS) growth method. SEM analysis showed highly dense and self aligned nanowire formation between the Si electrodes. Electrical and UV response measurements were performed in ambient condition. Current-voltage characteristics of devices exhibited both linear and non-linear behavior. This was the first demonstration of bridged ITZO and Zn-doped In2O3 nanowires. Our results show that bridged nanowire growth technique can be a potential candidate for high performance electronic and optoelectronic devices.",

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AU - Coşkun, Mustafa

AU - Ombaba, Matthew M.

AU - Dumludaǧ, Fatih

AU - Altindal, Ahmet

AU - Islam, M. Saif

PY - 2018

Y1 - 2018

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AB - In this study, indium-tin-zinc-oxide (ITZO) and Zn doped In2O3 nanowires were directly grown as bridged nanowires between two heavily doped silicon (Si) electrodes on an SOI wafer using single step vapor-solid-solid (VSS) growth method. SEM analysis showed highly dense and self aligned nanowire formation between the Si electrodes. Electrical and UV response measurements were performed in ambient condition. Current-voltage characteristics of devices exhibited both linear and non-linear behavior. This was the first demonstration of bridged ITZO and Zn-doped In2O3 nanowires. Our results show that bridged nanowire growth technique can be a potential candidate for high performance electronic and optoelectronic devices.

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Bridged oxide nanowire device fabrication using single step metal catalyst free thermal evaporation

Abstract

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