Biasing Control and Protection System for GaN HEMT Power Amplifier Measurements

Recep Onur Yildiz; Alperen Tunc; H. Bulent Yagc; Selcuk Paker; Osman Ceylan

doi:10.1109/LAMC50424.2021.9601558

Biasing Control and Protection System for GaN HEMT Power Amplifier Measurements

Recep Onur Yildiz, Alperen Tunc, H. Bulent Yagc, Selcuk Paker, Osman Ceylan

Department of Electronics and Communication Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

Depletion mode transistors, such as GaN HEMTs, are widely used in high-power RF applications. High-power RF amplifiers using GaN HEMTs are biased with large drain-source voltage, and a high current flows during its operation. Proper control of large voltage and current require precise biasing sequence and protection circuits for a reliable operation. In this study, a compact system to bias and protect high-power amplifiers is presented. It also has monitoring and data logging features. The system controls biasing sequence to turn the amplifier on/off, monitors the drain voltage, drain current, gate voltage, temperature, reflected or transmitted power, and protects the amplifier against overcurrent, high RF power, and high temperature. A microcontroller manages the biasing sequence, sensors, user interfaces, and settings. In addition to a keypad, monitoring and controlling is possible with a computer and Android device. The system is tested and verified with a 10W GaN HEMT power amplifier.

Original language	English
Title of host publication	2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728193588
DOIs	https://doi.org/10.1109/LAMC50424.2021.9601558
Publication status	Published - 2020
Event	2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020 - Cali, Colombia Duration: 26 May 2021 → 28 May 2021

Publication series

Name	2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020

Conference

Conference	2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020
Country/Territory	Colombia
City	Cali
Period	26/05/21 → 28/05/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

Keywords

Biasing
Device safety
GaN HEMT
Monitoring
RF power amplifier

Access to Document

10.1109/LAMC50424.2021.9601558

Cite this

Yildiz, R. O., Tunc, A., Yagc, H. B., Paker, S., & Ceylan, O. (2020). Biasing Control and Protection System for GaN HEMT Power Amplifier Measurements. In 2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020 (2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LAMC50424.2021.9601558

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title = "Biasing Control and Protection System for GaN HEMT Power Amplifier Measurements",

abstract = "Depletion mode transistors, such as GaN HEMTs, are widely used in high-power RF applications. High-power RF amplifiers using GaN HEMTs are biased with large drain-source voltage, and a high current flows during its operation. Proper control of large voltage and current require precise biasing sequence and protection circuits for a reliable operation. In this study, a compact system to bias and protect high-power amplifiers is presented. It also has monitoring and data logging features. The system controls biasing sequence to turn the amplifier on/off, monitors the drain voltage, drain current, gate voltage, temperature, reflected or transmitted power, and protects the amplifier against overcurrent, high RF power, and high temperature. A microcontroller manages the biasing sequence, sensors, user interfaces, and settings. In addition to a keypad, monitoring and controlling is possible with a computer and Android device. The system is tested and verified with a 10W GaN HEMT power amplifier.",

keywords = "Biasing, Device safety, GaN HEMT, Monitoring, RF power amplifier",

author = "Yildiz, {Recep Onur} and Alperen Tunc and Yagc, {H. Bulent} and Selcuk Paker and Osman Ceylan",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020 ; Conference date: 26-05-2021 Through 28-05-2021",

year = "2020",

doi = "10.1109/LAMC50424.2021.9601558",

language = "English",

series = "2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020",

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}

Yildiz, RO, Tunc, A, Yagc, HB, Paker, S & Ceylan, O 2020, Biasing Control and Protection System for GaN HEMT Power Amplifier Measurements. in 2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020. 2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020, Cali, Colombia, 26/05/21. https://doi.org/10.1109/LAMC50424.2021.9601558

Biasing Control and Protection System for GaN HEMT Power Amplifier Measurements. / Yildiz, Recep Onur; Tunc, Alperen; Yagc, H. Bulent et al.
2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. (2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yildiz, Recep Onur

AU - Tunc, Alperen

AU - Yagc, H. Bulent

AU - Paker, Selcuk

AU - Ceylan, Osman

PY - 2020

Y1 - 2020

N2 - Depletion mode transistors, such as GaN HEMTs, are widely used in high-power RF applications. High-power RF amplifiers using GaN HEMTs are biased with large drain-source voltage, and a high current flows during its operation. Proper control of large voltage and current require precise biasing sequence and protection circuits for a reliable operation. In this study, a compact system to bias and protect high-power amplifiers is presented. It also has monitoring and data logging features. The system controls biasing sequence to turn the amplifier on/off, monitors the drain voltage, drain current, gate voltage, temperature, reflected or transmitted power, and protects the amplifier against overcurrent, high RF power, and high temperature. A microcontroller manages the biasing sequence, sensors, user interfaces, and settings. In addition to a keypad, monitoring and controlling is possible with a computer and Android device. The system is tested and verified with a 10W GaN HEMT power amplifier.

AB - Depletion mode transistors, such as GaN HEMTs, are widely used in high-power RF applications. High-power RF amplifiers using GaN HEMTs are biased with large drain-source voltage, and a high current flows during its operation. Proper control of large voltage and current require precise biasing sequence and protection circuits for a reliable operation. In this study, a compact system to bias and protect high-power amplifiers is presented. It also has monitoring and data logging features. The system controls biasing sequence to turn the amplifier on/off, monitors the drain voltage, drain current, gate voltage, temperature, reflected or transmitted power, and protects the amplifier against overcurrent, high RF power, and high temperature. A microcontroller manages the biasing sequence, sensors, user interfaces, and settings. In addition to a keypad, monitoring and controlling is possible with a computer and Android device. The system is tested and verified with a 10W GaN HEMT power amplifier.

KW - Biasing

KW - Device safety

KW - GaN HEMT

KW - Monitoring

KW - RF power amplifier

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DO - 10.1109/LAMC50424.2021.9601558

M3 - Conference contribution

AN - SCOPUS:85123397531

T3 - 2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020

BT - 2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020

Y2 - 26 May 2021 through 28 May 2021

ER -

Biasing Control and Protection System for GaN HEMT Power Amplifier Measurements

Abstract

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Bibliographical note

Keywords

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