Bi-directional Distributed Amplifier in 0.11 μm CMOS Technology

Merve Gölçek Yazici*, Asim Kepkep*, Metin Yazgi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents and compares two different design approaches for bi-directional distributed amplifiers (BDDA) in 0.11 μm CMOS technology. Distributed amplifiers (DA) and BDDAs can be designed starting from T-type and π- type unit cells of artificial transmission lines (ATL). This paper presents π- type topology for BDDAs and compares with T-type BDDAs in terms of gain, bandwidth and chip area. Designing DAs and BDDAs with π- type unit cells provide advantages from two different perspectives. Firstly, π- type BDDAs can be designed with more gm - cells than T-type BDDAs with the approximately same chip area. This provides higher gain without the cost of chip area because a π- type unit cell has one less inductor than a T-type unit cell. Secondly, smaller-sized gm - cells can be designed owing to extra active cells in π- type BDDAs in order to increase the bandwidth of BDDAs. Hence, π- type BDDA can provide higher bandwidth with the same gain and the chip area if desired. The simulated gains of BDDA with three T-type and four π- type unit cells are 8.5 dB and 10 dB at 2-19.5 GHz. In addition, BDDA built using π- type unit cells with active cells equivalent to four fully active gm - cells is designed with smaller gm - cells to achieve higher bandwidth. Thus, 8.5 dB gain is obtained over 2-23 GHz. The chip areas are almost the same as the BDDA with three T-type unit cells for all versions of designed π- type BDDAs.

Original languageEnglish
Title of host publicationPRIME 2023 - 18th International Conference on Ph.D Research in Microelectronics and Electronics, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages333-336
Number of pages4
ISBN (Electronic)9798350303209
DOIs
Publication statusPublished - 2023
Event18th International Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2023 - Valencia, Spain
Duration: 18 Jun 202321 Jun 2023

Publication series

NamePRIME 2023 - 18th International Conference on Ph.D Research in Microelectronics and Electronics, Proceedings

Conference

Conference18th International Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2023
Country/TerritorySpain
CityValencia
Period18/06/2321/06/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

  • Bi-directional distributed amplifier
  • CMOS wide-band amplifier
  • distributed amplifier
  • π- type BDDA
  • π- type DA

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