Abstract
A negative-bias-temperature-instability (NBTI) monitor subcircuit is presented and implemented in 65-nm CMOS technology. The subcircuit can be incorporated in various analog circuit blocks subject to different variability, stress, and aging histories. For an amplifier block, the NBTI monitor is a linear sensor, and sensing is provided as variation of the amplifier gain in response to NBTI-induced bias variation. The monitor sensitivity in this configuration is 3.15 V -1 and is demonstrated through electrothermal stress on the amplifier circuit.
| Original language | English |
|---|---|
| Article number | 6095343 |
| Pages (from-to) | 177-179 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Device and Materials Reliability |
| Volume | 12 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Mar 2012 |
| Externally published | Yes |
Funding
Manuscript received August 30, 2011; revised October 24, 2011; accepted November 21, 2011. Date of publication December 5, 2011; date of current version March 7, 2012. This work was supported in part by the Self-Healing Mixed-Signal Integrated Circuits program of the Defense Advanced Research Projects Agency and in part by the prime contractor Raytheon Company under Contract/Grant FA8650-09-C-7925.
| Funders | Funder number |
|---|---|
| Defense Advanced Research Projects Agency | |
| Raytheon Company | FA8650-09-C-7925 |
Keywords
- Amplifier
- analog circuits
- negative-bias temperature instability (NBTI)
- reliability
- sensor