TY - GEN
T1 - An X-band SiGe low-noise amplifier with high gain and low noise figure
AU - Basyurt, Pinar Basak
AU - Tarim, Nil
PY - 2008
Y1 - 2008
N2 - This paper presents the design of a low-noise amplifier (LNA) with high gain and low noise figure (NF), targeting the X-band, in 0.25 μm SiGe BiCMOS process provided by IHP. Simulation results show that at 10 GHz, the proposed LNA has a noise figure of 2.295 dB, with both input and output impedances matched to 50 Ω, an input return loss of -30.22 dB, an output return loss of -17.02 dB, and a voltage gain of 20.74 dB while dissipating 7.5 mW power from a 2.5 V power supply. The circuit occupies a chip area of 590 x 765 μm 2.
AB - This paper presents the design of a low-noise amplifier (LNA) with high gain and low noise figure (NF), targeting the X-band, in 0.25 μm SiGe BiCMOS process provided by IHP. Simulation results show that at 10 GHz, the proposed LNA has a noise figure of 2.295 dB, with both input and output impedances matched to 50 Ω, an input return loss of -30.22 dB, an output return loss of -17.02 dB, and a voltage gain of 20.74 dB while dissipating 7.5 mW power from a 2.5 V power supply. The circuit occupies a chip area of 590 x 765 μm 2.
UR - http://www.scopus.com/inward/record.url?scp=50649091117&partnerID=8YFLogxK
U2 - 10.1109/ISCCSP.2008.4537389
DO - 10.1109/ISCCSP.2008.4537389
M3 - Conference contribution
AN - SCOPUS:50649091117
SN - 9781424416882
T3 - 2008 3rd International Symposium on Communications, Control, and Signal Processing, ISCCSP 2008
SP - 1103
EP - 1106
BT - 2008 3rd International Symposium on Communications, Control, and Signal Processing, ISCCSP2008
T2 - 2008 3rd International Symposium on Communications, Control, and Signal Processing, ISCCSP2008
Y2 - 12 March 2008 through 14 March 2008
ER -