A Wideband High-efficiency Doherty Power Amplifier for LTE

Kaan Koca; Huseyin Serif Savci; Sedef Kent

doi:10.1109/RADIOELEKTRONIKA57919.2023.10109057

A Wideband High-efficiency Doherty Power Amplifier for LTE

Kaan Koca^*, Huseyin Serif Savci, Sedef Kent

^*Corresponding author for this work

Department of Electronics and Communication Engineering

Istanbul Technical University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

This article describes a broadband Doherty power amplifier designed with a class AB and class C PA that is suitable for LTE Band-7 and Wi-Fi applications. The output matching network is theoretically analyzed, with emphasis on the effect of the auxiliary amplifier's non-ideal infinite output impedance on parasitic devices. A novel Doherty-like power amplifier (DPA) is constructed with 25 W, 2.2-2.8 GHz GaN HEMT transistors. The quarter-wave transformer that was previously used in the DPA topology was replaced by the corresponding Klopfenstein tapper network. Real-world prototype implementations have shown that this modification increases the achieved DPA bandwidth (BW) compared to conventional topologies while maintaining efficiency values. (Fractional bandwidth equals 24%) The DPA assumes an OBO value of 6 dB, which is typical for basic designs and explanations because the voltage level involved is 1:4 and the peak power amplifier is activated at half of the input voltage's dynamic range. However, in order to increase the OBO value, the signal must first be compatible with the PAPR value. This can be accomplished by adjusting the power divider in an asymmetrical manner. The OPBO range was extended using the asymmetric DPA technique.

Original language	English
Title of host publication	2023 33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350398342
DOIs	https://doi.org/10.1109/RADIOELEKTRONIKA57919.2023.10109057
Publication status	Published - 2023
Event	33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023 - Pardubice, Czech Republic Duration: 19 Apr 2023 → 20 Apr 2023

Publication series

Name	2023 33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023

Conference

Conference	33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023
Country/Territory	Czech Republic
City	Pardubice
Period	19/04/23 → 20/04/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

Doherty power amplifiers (DPA)
GaN-based field-effect transistors (FETs)
Long-Term Evolution (LTE)
Wi-Fi
broadband matching networks
wideband microwave amplifiers

Access to Document

10.1109/RADIOELEKTRONIKA57919.2023.10109057

Cite this

Koca, K., Savci, H. S., & Kent, S. (2023). A Wideband High-efficiency Doherty Power Amplifier for LTE. In 2023 33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023 (2023 33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RADIOELEKTRONIKA57919.2023.10109057

@inproceedings{56eb5c6847de43b2b0f05910406c875b,

title = "A Wideband High-efficiency Doherty Power Amplifier for LTE",

abstract = "This article describes a broadband Doherty power amplifier designed with a class AB and class C PA that is suitable for LTE Band-7 and Wi-Fi applications. The output matching network is theoretically analyzed, with emphasis on the effect of the auxiliary amplifier's non-ideal infinite output impedance on parasitic devices. A novel Doherty-like power amplifier (DPA) is constructed with 25 W, 2.2-2.8 GHz GaN HEMT transistors. The quarter-wave transformer that was previously used in the DPA topology was replaced by the corresponding Klopfenstein tapper network. Real-world prototype implementations have shown that this modification increases the achieved DPA bandwidth (BW) compared to conventional topologies while maintaining efficiency values. (Fractional bandwidth equals 24%) The DPA assumes an OBO value of 6 dB, which is typical for basic designs and explanations because the voltage level involved is 1:4 and the peak power amplifier is activated at half of the input voltage's dynamic range. However, in order to increase the OBO value, the signal must first be compatible with the PAPR value. This can be accomplished by adjusting the power divider in an asymmetrical manner. The OPBO range was extended using the asymmetric DPA technique.",

keywords = "Doherty power amplifiers (DPA), GaN-based field-effect transistors (FETs), Long-Term Evolution (LTE), Wi-Fi, broadband matching networks, wideband microwave amplifiers",

author = "Kaan Koca and Savci, {Huseyin Serif} and Sedef Kent",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023 ; Conference date: 19-04-2023 Through 20-04-2023",

year = "2023",

doi = "10.1109/RADIOELEKTRONIKA57919.2023.10109057",

language = "English",

series = "2023 33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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address = "United States",

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Koca, K, Savci, HS & Kent, S 2023, A Wideband High-efficiency Doherty Power Amplifier for LTE. in 2023 33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023. 2023 33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023, Institute of Electrical and Electronics Engineers Inc., 33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023, Pardubice, Czech Republic, 19/04/23. https://doi.org/10.1109/RADIOELEKTRONIKA57919.2023.10109057

A Wideband High-efficiency Doherty Power Amplifier for LTE. / Koca, Kaan; Savci, Huseyin Serif; Kent, Sedef.
2023 33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A Wideband High-efficiency Doherty Power Amplifier for LTE

AU - Koca, Kaan

AU - Savci, Huseyin Serif

AU - Kent, Sedef

PY - 2023

Y1 - 2023

N2 - This article describes a broadband Doherty power amplifier designed with a class AB and class C PA that is suitable for LTE Band-7 and Wi-Fi applications. The output matching network is theoretically analyzed, with emphasis on the effect of the auxiliary amplifier's non-ideal infinite output impedance on parasitic devices. A novel Doherty-like power amplifier (DPA) is constructed with 25 W, 2.2-2.8 GHz GaN HEMT transistors. The quarter-wave transformer that was previously used in the DPA topology was replaced by the corresponding Klopfenstein tapper network. Real-world prototype implementations have shown that this modification increases the achieved DPA bandwidth (BW) compared to conventional topologies while maintaining efficiency values. (Fractional bandwidth equals 24%) The DPA assumes an OBO value of 6 dB, which is typical for basic designs and explanations because the voltage level involved is 1:4 and the peak power amplifier is activated at half of the input voltage's dynamic range. However, in order to increase the OBO value, the signal must first be compatible with the PAPR value. This can be accomplished by adjusting the power divider in an asymmetrical manner. The OPBO range was extended using the asymmetric DPA technique.

AB - This article describes a broadband Doherty power amplifier designed with a class AB and class C PA that is suitable for LTE Band-7 and Wi-Fi applications. The output matching network is theoretically analyzed, with emphasis on the effect of the auxiliary amplifier's non-ideal infinite output impedance on parasitic devices. A novel Doherty-like power amplifier (DPA) is constructed with 25 W, 2.2-2.8 GHz GaN HEMT transistors. The quarter-wave transformer that was previously used in the DPA topology was replaced by the corresponding Klopfenstein tapper network. Real-world prototype implementations have shown that this modification increases the achieved DPA bandwidth (BW) compared to conventional topologies while maintaining efficiency values. (Fractional bandwidth equals 24%) The DPA assumes an OBO value of 6 dB, which is typical for basic designs and explanations because the voltage level involved is 1:4 and the peak power amplifier is activated at half of the input voltage's dynamic range. However, in order to increase the OBO value, the signal must first be compatible with the PAPR value. This can be accomplished by adjusting the power divider in an asymmetrical manner. The OPBO range was extended using the asymmetric DPA technique.

KW - Doherty power amplifiers (DPA)

KW - GaN-based field-effect transistors (FETs)

KW - Long-Term Evolution (LTE)

KW - Wi-Fi

KW - broadband matching networks

KW - wideband microwave amplifiers

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DO - 10.1109/RADIOELEKTRONIKA57919.2023.10109057

M3 - Conference contribution

AN - SCOPUS:85159094754

T3 - 2023 33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023

BT - 2023 33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 33rd International Conference Radioelektronika, RADIOELEKTRONIKA 2023

Y2 - 19 April 2023 through 20 April 2023

ER -

A Wideband High-efficiency Doherty Power Amplifier for LTE

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

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