A third generation solar cell based on wet-chemically etched Si nanowires and sol-gel derived Cu2ZnSnS4 thin films

Elif Peksu, Hakan Karaagac*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

Monophase Cu2ZnSnS4 (CZTS) thin films have been succesfully deposited on both soda lime glass substrate and Si nanowire (NW) arrays by a simple and cost-effective production route based on a combination of sol-gel and spin-coating technique. X-ray diffraction and energy dispersive X-ray analysis studies have revealed that post-annealing process at 350 °C is a sufficient temperature for the growth of a stoichiometric mono-phase CZTS thin film. The band gap energy of the films was found to be 1.55 eV. Following the optimization of CZTS thin films, they were deposited on the Si-NWs as an absorber layer for the fabrication of n-Si-NWs/p-CZTS structured solar cell. From the recorded I-V characteristics of the constructed solar cells under standard condition (A.M 15G), the power conversion efficiency was found to be 1.0 ± 0.1%.

Original languageEnglish
Pages (from-to)1117-1122
Number of pages6
JournalJournal of Alloys and Compounds
Volume774
DOIs
Publication statusPublished - 5 Feb 2019

Bibliographical note

Publisher Copyright:
© 2018 Elsevier B.V.

Keywords

  • CZTS
  • Photovoltaics
  • Si nanowires
  • Thin film

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