Abstract
Monophase Cu2ZnSnS4 (CZTS) thin films have been succesfully deposited on both soda lime glass substrate and Si nanowire (NW) arrays by a simple and cost-effective production route based on a combination of sol-gel and spin-coating technique. X-ray diffraction and energy dispersive X-ray analysis studies have revealed that post-annealing process at 350 °C is a sufficient temperature for the growth of a stoichiometric mono-phase CZTS thin film. The band gap energy of the films was found to be 1.55 eV. Following the optimization of CZTS thin films, they were deposited on the Si-NWs as an absorber layer for the fabrication of n-Si-NWs/p-CZTS structured solar cell. From the recorded I-V characteristics of the constructed solar cells under standard condition (A.M 15G), the power conversion efficiency was found to be 1.0 ± 0.1%.
Original language | English |
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Pages (from-to) | 1117-1122 |
Number of pages | 6 |
Journal | Journal of Alloys and Compounds |
Volume | 774 |
DOIs | |
Publication status | Published - 5 Feb 2019 |
Bibliographical note
Publisher Copyright:© 2018 Elsevier B.V.
Keywords
- CZTS
- Photovoltaics
- Si nanowires
- Thin film