Abstract
In this article, a systematic design approach for a Class-A operated wideband power amplifier is presented. The power amplifier structure comprises of two transistors in the cascaded single stage traveling wave amplifier topology. A power amplifier was designed by using the systematic approach and fabricated with 0.25 μm GaAs PHEMT MMIC process. The amplifier has an area of 3.4 × 1.4 mm2. Measurement results show that almost flat gain performance is obtained around 15 dB over 1.5-9 GHz operating bandwidth. In most of the band, with the help of a wideband load-pull matching technique, the amplifier delivers Po,sat and Po,1dB of around 30 dBm and 28 dBm where the corresponding power added efficiencies are >50% and >36%, respectively. It is shown that the proposed design approach has the advantage of simple and systematic design flow and it helps to realize step-by-step design for the designers.
| Original language | English |
|---|---|
| Pages (from-to) | 615-622 |
| Number of pages | 8 |
| Journal | International Journal of RF and Microwave Computer-Aided Engineering |
| Volume | 24 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - Sept 2014 |
Keywords
- cascaded single stage traveling wave amplifier
- GaAs PHEMT
- load-pull design
- power amplifiers
- wideband design
- wideband power amplifier