Abstract
We report on the design and test of a low-voltage temperature sensor designed for MEMS power-harvesting systems. The core of the sensor is a bandgap voltage reference circuit operating with a supply voltage in the range of 1-1.5V. The prototype was fabricated on a conventional 0.5μm Silicon-on-Sapphire (SOS) process. The sensor design consumes 15μA of current at 1V. The internal reference voltage is 550mV. The temperature sensor has a digital square wave output whose frequency is proportional to temperature. A linear model of the dependency of output frequency with temperature has a conversion factor of 1.6kHz/°C. The output is also independent of supply voltage in the range of 1-1.5V. We report measured results and targeted applications for the proposed circuit.
Original language | English |
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Article number | 4253173 |
Pages (from-to) | 2455-2458 |
Number of pages | 4 |
Journal | Proceedings - IEEE International Symposium on Circuits and Systems |
DOIs | |
Publication status | Published - 2007 |
Event | 2007 IEEE International Symposium on Circuits and Systems, ISCAS 2007 - New Orleans, LA, United States Duration: 27 May 2007 → 30 May 2007 |