A silicon-on-sapphire low-voltage temperature sensor for energy scavengers

Tolga Kaya*, Hur Koser, Eugenio Culurciello

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We report on the design and test of a low-voltage temperature sensor designed for MEMS power-harvesting systems. The core of the sensor is a bandgap voltage reference circuit operating with a supply voltage in the range of 1-1.5V. The prototype was fabricated on a conventional 0.5μm Silicon-on-Sapphire (SOS) process. The sensor design consumes 15μA of current at 1V. The internal reference voltage is 550mV. The temperature sensor has a digital square wave output whose frequency is proportional to temperature. A linear model of the dependency of output frequency with temperature has a conversion factor of 1.6kHz/°C. The output is also independent of supply voltage in the range of 1-1.5V. We report measured results and targeted applications for the proposed circuit.

Original languageEnglish
Article number4253173
Pages (from-to)2455-2458
Number of pages4
JournalProceedings - IEEE International Symposium on Circuits and Systems
DOIs
Publication statusPublished - 2007
Event2007 IEEE International Symposium on Circuits and Systems, ISCAS 2007 - New Orleans, LA, United States
Duration: 27 May 200730 May 2007

Fingerprint

Dive into the research topics of 'A silicon-on-sapphire low-voltage temperature sensor for energy scavengers'. Together they form a unique fingerprint.

Cite this