A silicon Hall sensor SoC for current sensors

Alper Girgin; Melih Bilmez; Hamid Yadegar Amin; Tufan Coşkun Karalar

doi:10.1016/j.mejo.2019.04.020

A silicon Hall sensor SoC for current sensors

Alper Girgin, Melih Bilmez, Hamid Yadegar Amin, Tufan Coşkun Karalar^*

^*Corresponding author for this work

Department of Electronics and Communication Engineering

Istanbul Technical University

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

In this paper we present a System on Chip (SoC) that implements a Hall Effect Sensor along with its readout circuits and calibration support. The sensor is designed for use in Hall effect based current sensors. The SoC was implemented in 0.18u CMOS technology and integrates Hall sense elements, preamplifiers as well as a delta sigma ADC, a DAC and a digital calibration. The SoC achieves 11 V/T gain and 0.76% RMS accuracy over a range of ±300 mT and 30 kHz signal bandwidth. The SoC integrates a digital correction unit that implements a polynomial computation algorithm for calibrating out the current sensor's magnetic core induced nonlinearities. Offset temperature drift of the sensor is 6.81μT per degrees over −40 °C to 85 °C range. A current sensor is built using the SoC. It can measure currents from −10 A to 10 A and achieve 1.67% RMS measurement accuracy.

Original language	English
Pages (from-to)	12-18
Number of pages	7
Journal	Microelectronics Journal
Volume	90
DOIs	https://doi.org/10.1016/j.mejo.2019.04.020
Publication status	Published - Aug 2019

Bibliographical note

Publisher Copyright:
© 2019 Elsevier Ltd

Funding

This project was funded by the Scientific and Technological Research Council of Turkey TUBITAK research grant 115C053. Assoc. Prof. Hüseyin Kurt is acknowledged for his assistance in magnetic sensor characterization. ITU VLSI Laboratories is acknowledged for the SoC characterization. This project was funded by the Scientific and Technological Research Council of Turkey TUBITAK research grant 115C053 . Assoc. Prof. Hüseyin Kurt is acknowledged for his assistance in magnetic sensor characterization. ITU VLSI Laboratories is acknowledged for the SoC characterization.

Funders	Funder number
Scientific and Technological Research Council of Turkey TUBITAK
Türkiye Bilimsel ve Teknolojik Araştirma Kurumu	115C053

Keywords

Digital sensor calibration
Hall sensor
Hall sensor based current sensors
Integrated silicon sensor
Read out ICs
Sensor SoC

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10.1016/j.mejo.2019.04.020

Cite this

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abstract = "In this paper we present a System on Chip (SoC) that implements a Hall Effect Sensor along with its readout circuits and calibration support. The sensor is designed for use in Hall effect based current sensors. The SoC was implemented in 0.18u CMOS technology and integrates Hall sense elements, preamplifiers as well as a delta sigma ADC, a DAC and a digital calibration. The SoC achieves 11 V/T gain and 0.76% RMS accuracy over a range of ±300 mT and 30 kHz signal bandwidth. The SoC integrates a digital correction unit that implements a polynomial computation algorithm for calibrating out the current sensor's magnetic core induced nonlinearities. Offset temperature drift of the sensor is 6.81μT per degrees over −40 °C to 85 °C range. A current sensor is built using the SoC. It can measure currents from −10 A to 10 A and achieve 1.67% RMS measurement accuracy.",

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AU - Karalar, Tufan Coşkun

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N2 - In this paper we present a System on Chip (SoC) that implements a Hall Effect Sensor along with its readout circuits and calibration support. The sensor is designed for use in Hall effect based current sensors. The SoC was implemented in 0.18u CMOS technology and integrates Hall sense elements, preamplifiers as well as a delta sigma ADC, a DAC and a digital calibration. The SoC achieves 11 V/T gain and 0.76% RMS accuracy over a range of ±300 mT and 30 kHz signal bandwidth. The SoC integrates a digital correction unit that implements a polynomial computation algorithm for calibrating out the current sensor's magnetic core induced nonlinearities. Offset temperature drift of the sensor is 6.81μT per degrees over −40 °C to 85 °C range. A current sensor is built using the SoC. It can measure currents from −10 A to 10 A and achieve 1.67% RMS measurement accuracy.

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A silicon Hall sensor SoC for current sensors

Abstract

Bibliographical note

Funding

Keywords

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