A novel architecture for photovoltaic devices: Field-effect solar cells using screening-engineered nanoelectrodes for silicon and earth abundant cuprous oxide

Oscar Vazquez-Mena; William Regan; Steven Byrnes; Onur Ergen; Will Gannett; Feng Wang; Alex Zettl

doi:10.1109/PVSC-Vol2.2013.7179252

A novel architecture for photovoltaic devices: Field-effect solar cells using screening-engineered nanoelectrodes for silicon and earth abundant cuprous oxide

Oscar Vazquez-Mena
, William Regan
, Steven Byrnes
, Onur Ergen
, Will Gannett
, Feng Wang
, Alex Zettl

University of California at Berkeley

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A field effect cuprous oxide solar cell device based on a gate that controls carrier concentration in semiconductors and using screening-engineered nanostructured electrodes is presented. The cell works in inversion mode, with a top gate that forms a depletion layer and a p-n junction, and with nanostructured electrodes that collect the photocurrent across the junction. This device does not require any doping process or a heterojunction, opening a novel route for materials that are difficult to dope. As a proof of principle, we present experimental results of a silicon field effect solar cell. To demonstrate the potential of this configuration for alternative materials, we present a field-effect solar cell made of earth abundant cuprous oxide, which has a favorable band gap but that is difficult to dope. We show the synthesis of the material, the effect of the gate on the carrier concentration and a photovoltaic power conversion efficiency of ∼0.2%.

Original language	English
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	83-86
Number of pages	4
ISBN (Electronic)	9781479905126
DOIs	https://doi.org/10.1109/PVSC-Vol2.2013.7179252
Publication status	Published - 4 Aug 2015
Externally published	Yes
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, United States Duration: 16 Jun 2013 → 21 Jun 2013

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2015-August
ISSN (Print)	0160-8371

Conference

Conference	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa
Period	16/06/13 → 21/06/13

Bibliographical note

Publisher Copyright:
© 2013 IEEE.

Funding

This authors acknowledge the support from the Office of Energy Research, Materials Sciences and Engineering Division, of the US Department of Energy under contract No. DEAC02- 05CH11231, from the National Science Foundation within the Center of Integrated Nanomechanical Systems, under Grant EEC-832819, and from the Office of Naval Research (MURI). O. V. acknowledges support by the Swiss National Science Foundation (PBELP2-135864) and W.R. acknowledges support through a National Science Foundation Graduate Research Fellowship.

Funders	Funder number
Office of Energy Research
National Science Foundation	EEC-832819
Office of Naval Research
U.S. Department of Energy	DEAC02- 05CH11231
Division of Materials Sciences and Engineering
Multidisciplinary University Research Initiative
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung	PBELP2-135864

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

cuprous oxide
field effect
nanostructures
photovoltaic cells
solar energy

Access to Document

10.1109/PVSC-Vol2.2013.7179252

Cite this

Vazquez-Mena, O., Regan, W., Byrnes, S., Ergen, O., Gannett, W., Wang, F., & Zettl, A. (2015). A novel architecture for photovoltaic devices: Field-effect solar cells using screening-engineered nanoelectrodes for silicon and earth abundant cuprous oxide. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 83-86). Article 7179252 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC-Vol2.2013.7179252

Vazquez-Mena, Oscar ; Regan, William ; Byrnes, Steven et al. / A novel architecture for photovoltaic devices : Field-effect solar cells using screening-engineered nanoelectrodes for silicon and earth abundant cuprous oxide. 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 83-86 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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abstract = "A field effect cuprous oxide solar cell device based on a gate that controls carrier concentration in semiconductors and using screening-engineered nanostructured electrodes is presented. The cell works in inversion mode, with a top gate that forms a depletion layer and a p-n junction, and with nanostructured electrodes that collect the photocurrent across the junction. This device does not require any doping process or a heterojunction, opening a novel route for materials that are difficult to dope. As a proof of principle, we present experimental results of a silicon field effect solar cell. To demonstrate the potential of this configuration for alternative materials, we present a field-effect solar cell made of earth abundant cuprous oxide, which has a favorable band gap but that is difficult to dope. We show the synthesis of the material, the effect of the gate on the carrier concentration and a photovoltaic power conversion efficiency of ∼0.2\%.",

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Vazquez-Mena, O, Regan, W, Byrnes, S, Ergen, O, Gannett, W, Wang, F & Zettl, A 2015, A novel architecture for photovoltaic devices: Field-effect solar cells using screening-engineered nanoelectrodes for silicon and earth abundant cuprous oxide. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 7179252, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 83-86, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, United States, 16/06/13. https://doi.org/10.1109/PVSC-Vol2.2013.7179252

A novel architecture for photovoltaic devices: Field-effect solar cells using screening-engineered nanoelectrodes for silicon and earth abundant cuprous oxide. / Vazquez-Mena, Oscar; Regan, William; Byrnes, Steven et al.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2015. p. 83-86 7179252 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Vazquez-Mena, Oscar

AU - Regan, William

AU - Byrnes, Steven

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AU - Gannett, Will

AU - Wang, Feng

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N2 - A field effect cuprous oxide solar cell device based on a gate that controls carrier concentration in semiconductors and using screening-engineered nanostructured electrodes is presented. The cell works in inversion mode, with a top gate that forms a depletion layer and a p-n junction, and with nanostructured electrodes that collect the photocurrent across the junction. This device does not require any doping process or a heterojunction, opening a novel route for materials that are difficult to dope. As a proof of principle, we present experimental results of a silicon field effect solar cell. To demonstrate the potential of this configuration for alternative materials, we present a field-effect solar cell made of earth abundant cuprous oxide, which has a favorable band gap but that is difficult to dope. We show the synthesis of the material, the effect of the gate on the carrier concentration and a photovoltaic power conversion efficiency of ∼0.2%.

AB - A field effect cuprous oxide solar cell device based on a gate that controls carrier concentration in semiconductors and using screening-engineered nanostructured electrodes is presented. The cell works in inversion mode, with a top gate that forms a depletion layer and a p-n junction, and with nanostructured electrodes that collect the photocurrent across the junction. This device does not require any doping process or a heterojunction, opening a novel route for materials that are difficult to dope. As a proof of principle, we present experimental results of a silicon field effect solar cell. To demonstrate the potential of this configuration for alternative materials, we present a field-effect solar cell made of earth abundant cuprous oxide, which has a favorable band gap but that is difficult to dope. We show the synthesis of the material, the effect of the gate on the carrier concentration and a photovoltaic power conversion efficiency of ∼0.2%.

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Vazquez-Mena O, Regan W, Byrnes S, Ergen O, Gannett W, Wang F et al. A novel architecture for photovoltaic devices: Field-effect solar cells using screening-engineered nanoelectrodes for silicon and earth abundant cuprous oxide. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2015. p. 83-86. 7179252. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC-Vol2.2013.7179252

A novel architecture for photovoltaic devices: Field-effect solar cells using screening-engineered nanoelectrodes for silicon and earth abundant cuprous oxide

Abstract

Publication series

Conference

Bibliographical note

Funding

UN SDGs

Keywords

Access to Document

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Cite this