A new high performance CMOS active inductor

Hadi Ghasernzadeh Marnen; Metin Yazgi; Ramazan Kopru; Ali Naderi Saatlo

doi:10.1109/TSP.2016.7760881

A new high performance CMOS active inductor

Hadi Ghasernzadeh Marnen, Metin Yazgi, Ramazan Kopru, Ali Naderi Saatlo

Department of Electronics and Communication Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Citations (Scopus)

Abstract

A new high-performance active inductor with ability to tune its self-resonance frequency and quality factor without affecting each other is presented in this letter. Using the input transistor of active inductor in cascoding configuration gives this property to designed circuit. Furthermore, the input transistor topology make the device robust in terms of its performance over variation in process and temperature. On the other hand, RC feedback is used to cancel the parasitic components in input node of the active device, which results to improve circuit performance. Schematic and post-layout simulation results shows the theory validity of the design. Monte Carlo and temperature analysis is done to show structure robustness in PVT variation. Inductive behavior frequency range of suggested structure is 0.3-11.4 GHz. Maximum quality factor is obtained as high as 3.7k at 6.3 GHz. Total power consumption is as low as 1mW with 1.8 V power supply.

Original language	English
Title of host publication	2016 39th International Conference on Telecommunications and Signal Processing, TSP 2016
Editors	Norbert Herencsar
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	291-294
Number of pages	4
ISBN (Electronic)	9781509012886
DOIs	https://doi.org/10.1109/TSP.2016.7760881
Publication status	Published - 28 Nov 2016
Event	39th International Conference on Telecommunications and Signal Processing, TSP 2016 - Vienna, Austria Duration: 27 Jun 2016 → 29 Jun 2016

Publication series

Name	2016 39th International Conference on Telecommunications and Signal Processing, TSP 2016

Conference

Conference	39th International Conference on Telecommunications and Signal Processing, TSP 2016
Country/Territory	Austria
City	Vienna
Period	27/06/16 → 29/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

Active inductor
Cascoding
CMOS
Parasitic components
RC feedback

Access to Document

10.1109/TSP.2016.7760881

Cite this

Marnen, H. G., Yazgi, M., Kopru, R., & Saatlo, A. N. (2016). A new high performance CMOS active inductor. In N. Herencsar (Ed.), 2016 39th International Conference on Telecommunications and Signal Processing, TSP 2016 (pp. 291-294). Article 7760881 (2016 39th International Conference on Telecommunications and Signal Processing, TSP 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TSP.2016.7760881

Marnen, Hadi Ghasernzadeh ; Yazgi, Metin ; Kopru, Ramazan et al. / A new high performance CMOS active inductor. 2016 39th International Conference on Telecommunications and Signal Processing, TSP 2016. editor / Norbert Herencsar. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 291-294 (2016 39th International Conference on Telecommunications and Signal Processing, TSP 2016).

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title = "A new high performance CMOS active inductor",

abstract = "A new high-performance active inductor with ability to tune its self-resonance frequency and quality factor without affecting each other is presented in this letter. Using the input transistor of active inductor in cascoding configuration gives this property to designed circuit. Furthermore, the input transistor topology make the device robust in terms of its performance over variation in process and temperature. On the other hand, RC feedback is used to cancel the parasitic components in input node of the active device, which results to improve circuit performance. Schematic and post-layout simulation results shows the theory validity of the design. Monte Carlo and temperature analysis is done to show structure robustness in PVT variation. Inductive behavior frequency range of suggested structure is 0.3-11.4 GHz. Maximum quality factor is obtained as high as 3.7k at 6.3 GHz. Total power consumption is as low as 1mW with 1.8 V power supply.",

keywords = "Active inductor, Cascoding, CMOS, Parasitic components, RC feedback",

author = "Marnen, {Hadi Ghasernzadeh} and Metin Yazgi and Ramazan Kopru and Saatlo, {Ali Naderi}",

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doi = "10.1109/TSP.2016.7760881",

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Marnen, HG, Yazgi, M, Kopru, R & Saatlo, AN 2016, A new high performance CMOS active inductor. in N Herencsar (ed.), 2016 39th International Conference on Telecommunications and Signal Processing, TSP 2016., 7760881, 2016 39th International Conference on Telecommunications and Signal Processing, TSP 2016, Institute of Electrical and Electronics Engineers Inc., pp. 291-294, 39th International Conference on Telecommunications and Signal Processing, TSP 2016, Vienna, Austria, 27/06/16. https://doi.org/10.1109/TSP.2016.7760881

A new high performance CMOS active inductor. / Marnen, Hadi Ghasernzadeh; Yazgi, Metin; Kopru, Ramazan et al.
2016 39th International Conference on Telecommunications and Signal Processing, TSP 2016. ed. / Norbert Herencsar. Institute of Electrical and Electronics Engineers Inc., 2016. p. 291-294 7760881 (2016 39th International Conference on Telecommunications and Signal Processing, TSP 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Marnen, Hadi Ghasernzadeh

AU - Yazgi, Metin

AU - Kopru, Ramazan

AU - Saatlo, Ali Naderi

PY - 2016/11/28

Y1 - 2016/11/28

N2 - A new high-performance active inductor with ability to tune its self-resonance frequency and quality factor without affecting each other is presented in this letter. Using the input transistor of active inductor in cascoding configuration gives this property to designed circuit. Furthermore, the input transistor topology make the device robust in terms of its performance over variation in process and temperature. On the other hand, RC feedback is used to cancel the parasitic components in input node of the active device, which results to improve circuit performance. Schematic and post-layout simulation results shows the theory validity of the design. Monte Carlo and temperature analysis is done to show structure robustness in PVT variation. Inductive behavior frequency range of suggested structure is 0.3-11.4 GHz. Maximum quality factor is obtained as high as 3.7k at 6.3 GHz. Total power consumption is as low as 1mW with 1.8 V power supply.

AB - A new high-performance active inductor with ability to tune its self-resonance frequency and quality factor without affecting each other is presented in this letter. Using the input transistor of active inductor in cascoding configuration gives this property to designed circuit. Furthermore, the input transistor topology make the device robust in terms of its performance over variation in process and temperature. On the other hand, RC feedback is used to cancel the parasitic components in input node of the active device, which results to improve circuit performance. Schematic and post-layout simulation results shows the theory validity of the design. Monte Carlo and temperature analysis is done to show structure robustness in PVT variation. Inductive behavior frequency range of suggested structure is 0.3-11.4 GHz. Maximum quality factor is obtained as high as 3.7k at 6.3 GHz. Total power consumption is as low as 1mW with 1.8 V power supply.

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KW - Cascoding

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KW - Parasitic components

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ER -

Marnen HG, Yazgi M, Kopru R, Saatlo AN. A new high performance CMOS active inductor. In Herencsar N, editor, 2016 39th International Conference on Telecommunications and Signal Processing, TSP 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 291-294. 7760881. (2016 39th International Conference on Telecommunications and Signal Processing, TSP 2016). doi: 10.1109/TSP.2016.7760881

A new high performance CMOS active inductor

Abstract

Publication series

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Bibliographical note

Keywords

Access to Document

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