A new approach for the extraction of SPICE MOSFET level-3 static model parameters

Metin Yazgi; Hakan Kuntman

doi:10.1109/ICECS.1998.813372

A new approach for the extraction of SPICE MOSFET level-3 static model parameters

Metin Yazgi, Hakan Kuntman

Department of Electronics and Communication Engineering

Istanbul Technical University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Citations (Scopus)

Abstract

An iteration procedure obtained by using a new approach is presented for the extraction of SPICE Level-3 MOS Transistor static model parameters KP, V_TH, θ, V_MAX and R_S(= R_D). The procedure uses both gate and drain characteristics or one of these in the triode region of operation. As well as the triode region parameters, N_FS and χ can be find in the overall procedure. Results of the procedure have been compared with the experimental results. It is obvious from this comparison that the new approach is effective for determination of Level-3 model parameters. In addition to that, it is possible to use this new approach for other models which can be represented by polinomial equations in which the parameters are coefficients as in eqn (2).

Original language	English
Title of host publication	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	505-508
Number of pages	4
ISBN (Electronic)	0780350081
DOIs	https://doi.org/10.1109/ICECS.1998.813372
Publication status	Published - 1998
Event	5th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1998 - Lisboa, Portugal Duration: 7 Sept 1998 → 10 Sept 1998

Publication series

Name	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Volume	1

Conference

Conference	5th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1998
Country/Territory	Portugal
City	Lisboa
Period	7/09/98 → 10/09/98

Bibliographical note

Publisher Copyright:
© 1998 IEEE.

Access to Document

10.1109/ICECS.1998.813372

Cite this

Yazgi, M., & Kuntman, H. (1998). A new approach for the extraction of SPICE MOSFET level-3 static model parameters. In Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems (pp. 505-508). Article 813372 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICECS.1998.813372

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title = "A new approach for the extraction of SPICE MOSFET level-3 static model parameters",

abstract = "An iteration procedure obtained by using a new approach is presented for the extraction of SPICE Level-3 MOS Transistor static model parameters KP, VTH, θ, VMAX and RS(= RD). The procedure uses both gate and drain characteristics or one of these in the triode region of operation. As well as the triode region parameters, NFS and χ can be find in the overall procedure. Results of the procedure have been compared with the experimental results. It is obvious from this comparison that the new approach is effective for determination of Level-3 model parameters. In addition to that, it is possible to use this new approach for other models which can be represented by polinomial equations in which the parameters are coefficients as in eqn (2).",

author = "Metin Yazgi and Hakan Kuntman",

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doi = "10.1109/ICECS.1998.813372",

language = "English",

series = "Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems",

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Yazgi, M & Kuntman, H 1998, A new approach for the extraction of SPICE MOSFET level-3 static model parameters. in Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems., 813372, Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, vol. 1, Institute of Electrical and Electronics Engineers Inc., pp. 505-508, 5th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1998, Lisboa, Portugal, 7/09/98. https://doi.org/10.1109/ICECS.1998.813372

A new approach for the extraction of SPICE MOSFET level-3 static model parameters. / Yazgi, Metin; Kuntman, Hakan.
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems. Institute of Electrical and Electronics Engineers Inc., 1998. p. 505-508 813372 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - An iteration procedure obtained by using a new approach is presented for the extraction of SPICE Level-3 MOS Transistor static model parameters KP, VTH, θ, VMAX and RS(= RD). The procedure uses both gate and drain characteristics or one of these in the triode region of operation. As well as the triode region parameters, NFS and χ can be find in the overall procedure. Results of the procedure have been compared with the experimental results. It is obvious from this comparison that the new approach is effective for determination of Level-3 model parameters. In addition to that, it is possible to use this new approach for other models which can be represented by polinomial equations in which the parameters are coefficients as in eqn (2).

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BT - Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

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Yazgi M, Kuntman H. A new approach for the extraction of SPICE MOSFET level-3 static model parameters. In Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems. Institute of Electrical and Electronics Engineers Inc. 1998. p. 505-508. 813372. (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems). doi: 10.1109/ICECS.1998.813372

A new approach for the extraction of SPICE MOSFET level-3 static model parameters

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