Abstract
In this work, a hybrid solar cell based on Si nanowires (NWs) coated with a polymer (PCBM) is presented. Vertically well-aligned Si NWs were successfully synthesized by a Ag-assisted electroless etching technique with etching depth of 3 μm uniformly distributed over the surface of p-type Si wafer. Three-dimensional (p-Si NW)/PCBM ([6,6]-phenyl C61-butyric acid methyl ester) hybrid solar cell was fabricated by encapsulation of Si NW arrays by a thin layer of PCBM deposited by spin-coating process. The characteristics of the hybrid cell was studied with current-voltage and capacitance-voltage measurements by which the barrier height and ideality factor were found to be 0.85 V and 2.2, respectively. From a partially illuminated area of the Al/p-Si NW/PCBM/ITO structured hybrid solar cell, the open circuit voltage, short-circuit current density, fill factor, and power conversion efficiency were calculated as 0.19 V, 8.1 mA cm-2, 27 and 0.41%, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 2503-2508 |
| Number of pages | 6 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 211 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1 Nov 2014 |
Bibliographical note
Publisher Copyright:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Keywords
- nanowires
- responsivity
- solar cells
- thin films
