A high linearity low power 130 nm CMOS LNA for medical ultrasound imaging

Ahmet Suna; Serdar Ozoguz

doi:10.1109/ICECS46596.2019.8965090

A high linearity low power 130 nm CMOS LNA for medical ultrasound imaging

Ahmet Suna, Serdar Ozoguz

Department of Electronics and Communication Engineering

Istanbul Technical University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, a front-end high linearity low-noise-amplifier (LNA) has been introduced for high frequency ultrasound imaging. The design has been accomplished through UMC 130 nm complementary metal oxide semiconductor (CMOS) technology. Apart from noise and distortion cancellation of the common gate (CG) stage, 'derivative superposition' (DS) method has been adapted to the proposed design. As a result of this, third order intermodulation product suppression has been achieved, and linearity performance of the overall design has been significantly improved. At 37°C, the proposed ultrasound balun LNA accomplishes a voltage gain of greater than 19 dB between 0.3 MHz to 80 MHz, a third order input intercept point (IIP₃) value of -4.5 dB, a noise figure (NF) value of 4.9 dB, and a power dissipation value of 189.9 μW. The proposed design simultaneously achieved low power and high third order linearity.

Original language	English
Title of host publication	2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	687-690
Number of pages	4
ISBN (Electronic)	9781728109961
DOIs	https://doi.org/10.1109/ICECS46596.2019.8965090
Publication status	Published - Nov 2019
Event	26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019 - Genoa, Italy Duration: 27 Nov 2019 → 29 Nov 2019

Publication series

Name	2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019

Conference

Conference	26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019
Country/Territory	Italy
City	Genoa
Period	27/11/19 → 29/11/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

Keywords

Complementary metal oxide semiconductor (CMOS)
Derivative superposition
Distortion
Front-end
Linearity
Low-noise-amplifier
Noise
Ultrasound

Access to Document

10.1109/ICECS46596.2019.8965090

Cite this

Suna, A., & Ozoguz, S. (2019). A high linearity low power 130 nm CMOS LNA for medical ultrasound imaging. In 2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019 (pp. 687-690). Article 8965090 (2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICECS46596.2019.8965090

@inproceedings{7e4db127c21f4a139147ad4590f5bd0e,

title = "A high linearity low power 130 nm CMOS LNA for medical ultrasound imaging",

abstract = "In this paper, a front-end high linearity low-noise-amplifier (LNA) has been introduced for high frequency ultrasound imaging. The design has been accomplished through UMC 130 nm complementary metal oxide semiconductor (CMOS) technology. Apart from noise and distortion cancellation of the common gate (CG) stage, 'derivative superposition' (DS) method has been adapted to the proposed design. As a result of this, third order intermodulation product suppression has been achieved, and linearity performance of the overall design has been significantly improved. At 37°C, the proposed ultrasound balun LNA accomplishes a voltage gain of greater than 19 dB between 0.3 MHz to 80 MHz, a third order input intercept point (IIP3) value of -4.5 dB, a noise figure (NF) value of 4.9 dB, and a power dissipation value of 189.9 μW. The proposed design simultaneously achieved low power and high third order linearity.",

keywords = "Complementary metal oxide semiconductor (CMOS), Derivative superposition, Distortion, Front-end, Linearity, Low-noise-amplifier, Noise, Ultrasound",

author = "Ahmet Suna and Serdar Ozoguz",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019 ; Conference date: 27-11-2019 Through 29-11-2019",

year = "2019",

month = nov,

doi = "10.1109/ICECS46596.2019.8965090",

language = "English",

series = "2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "687--690",

booktitle = "2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019",

address = "United States",

}

Suna, A & Ozoguz, S 2019, A high linearity low power 130 nm CMOS LNA for medical ultrasound imaging. in 2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019., 8965090, 2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019, Institute of Electrical and Electronics Engineers Inc., pp. 687-690, 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019, Genoa, Italy, 27/11/19. https://doi.org/10.1109/ICECS46596.2019.8965090

A high linearity low power 130 nm CMOS LNA for medical ultrasound imaging. / Suna, Ahmet; Ozoguz, Serdar.
2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 687-690 8965090 (2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A high linearity low power 130 nm CMOS LNA for medical ultrasound imaging

AU - Suna, Ahmet

AU - Ozoguz, Serdar

PY - 2019/11

Y1 - 2019/11

N2 - In this paper, a front-end high linearity low-noise-amplifier (LNA) has been introduced for high frequency ultrasound imaging. The design has been accomplished through UMC 130 nm complementary metal oxide semiconductor (CMOS) technology. Apart from noise and distortion cancellation of the common gate (CG) stage, 'derivative superposition' (DS) method has been adapted to the proposed design. As a result of this, third order intermodulation product suppression has been achieved, and linearity performance of the overall design has been significantly improved. At 37°C, the proposed ultrasound balun LNA accomplishes a voltage gain of greater than 19 dB between 0.3 MHz to 80 MHz, a third order input intercept point (IIP3) value of -4.5 dB, a noise figure (NF) value of 4.9 dB, and a power dissipation value of 189.9 μW. The proposed design simultaneously achieved low power and high third order linearity.

AB - In this paper, a front-end high linearity low-noise-amplifier (LNA) has been introduced for high frequency ultrasound imaging. The design has been accomplished through UMC 130 nm complementary metal oxide semiconductor (CMOS) technology. Apart from noise and distortion cancellation of the common gate (CG) stage, 'derivative superposition' (DS) method has been adapted to the proposed design. As a result of this, third order intermodulation product suppression has been achieved, and linearity performance of the overall design has been significantly improved. At 37°C, the proposed ultrasound balun LNA accomplishes a voltage gain of greater than 19 dB between 0.3 MHz to 80 MHz, a third order input intercept point (IIP3) value of -4.5 dB, a noise figure (NF) value of 4.9 dB, and a power dissipation value of 189.9 μW. The proposed design simultaneously achieved low power and high third order linearity.

KW - Complementary metal oxide semiconductor (CMOS)

KW - Derivative superposition

KW - Distortion

KW - Front-end

KW - Linearity

KW - Low-noise-amplifier

KW - Noise

KW - Ultrasound

UR - http://www.scopus.com/inward/record.url?scp=85079133699&partnerID=8YFLogxK

U2 - 10.1109/ICECS46596.2019.8965090

DO - 10.1109/ICECS46596.2019.8965090

M3 - Conference contribution

AN - SCOPUS:85079133699

T3 - 2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019

SP - 687

EP - 690

BT - 2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019

Y2 - 27 November 2019 through 29 November 2019

ER -

Suna A, Ozoguz S. A high linearity low power 130 nm CMOS LNA for medical ultrasound imaging. In 2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 687-690. 8965090. (2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019). doi: 10.1109/ICECS46596.2019.8965090

A high linearity low power 130 nm CMOS LNA for medical ultrasound imaging

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this