Abstract
In this paper, a single-stage cascode low noise amplifier (LNA) was designed using UMC 180 nm complementary metal oxide semiconductor (CMOS) technology for 2.025-2.12 GHz (S-Band), specifically aimed for cryogenic applications. All transistor gates have electrostatic discharge (ESD) protection. The LNA achieved 15.8 dB gain, +2 dBm IIP3, and 1.6 dB noise figure (NF) at 2.075 GHz drawing 7.66 mA current from a 1.8 V supply. With regard to its counterparts, the LNA performs better in terms of its IIP3 outcome.
| Original language | English |
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| Title of host publication | 2017 European Conference on Circuit Theory and Design, ECCTD 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781538639740 |
| DOIs | |
| Publication status | Published - 31 Oct 2017 |
| Event | 2017 European Conference on Circuit Theory and Design, ECCTD 2017 - Catania, Italy Duration: 4 Sept 2017 → 6 Sept 2017 |
Publication series
| Name | 2017 European Conference on Circuit Theory and Design, ECCTD 2017 |
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Conference
| Conference | 2017 European Conference on Circuit Theory and Design, ECCTD 2017 |
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| Country/Territory | Italy |
| City | Catania |
| Period | 4/09/17 → 6/09/17 |
Bibliographical note
Publisher Copyright:© 2017 IEEE.
Funding
This work was sponsored by the Technological Research Council of Turkey under the project TÜBİTAK 1001 215E080 and Istanbul Technical University Department of Scientific Research Projects under the project 39465.
| Funders | Funder number |
|---|---|
| Istanbul Technical University Department of Scientific Research Projects | 39465 |
| Technological Research Council of Turkey | 1001 215E080 |
Keywords
- complementary metal oxide semiconductor (CMOS)
- cryogenic
- electrostatic discharge (ESD)
- Low noise amplifier (LNA)