A functionally graded design study for boron carbide and boron carbonitride thin films deposited by plasma-enhanced DC magnetron sputtering

T. Tavsanoglu*, O. Yucel, O. Addemir, M. Jeandin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)

Abstract

The B-C-N system is characterized by short bond lengths and includes the hardest known materials, c-BN and B4C, as well as other materials with remarkable tribological properties such as h-BN. Despite these good properties, adhesion problems were observed for B4C and BCN thin films on steel and Si substrates when the film thickness exceeds 500 nm. To enhance the adhesion, three functionally graded designs; surface boronizing of the steel substrate before deposition (Boride underlayer/B4C), Ti/TiC/B 4C and Ti/TiN/BCN structures were discussed. Cross-sectional FE-SEM examinations and elemental depth profiling by SIMS were revealed the graded structure of the films. The elemental film composition was measured by EPMA. The mechanical properties were determined by nanoindentation and the tribological properties by pin-on disc measurements. The results demonstrated the possibility of growing well adherent boron carbide and boron carbonitride films with thicknesses in the μm range.

Original languageEnglish
Title of host publicationTMS2008 - 137th Annual Meeting and Exhibition Supplemental Proceedings
Subtitle of host publicationMaterials Processing and Properties
Pages279-285
Number of pages7
Publication statusPublished - 2008
EventTMS 2008 Annual Meeting Supplemental: Materials Processing and Properties - New Orleans, LA, United States
Duration: 9 Mar 200813 Mar 2008

Publication series

NameTMS Annual Meeting
Volume1

Conference

ConferenceTMS 2008 Annual Meeting Supplemental: Materials Processing and Properties
Country/TerritoryUnited States
CityNew Orleans, LA
Period9/03/0813/03/08

Keywords

  • BCN
  • Boron carbide
  • FGM
  • Plasma enhanced magnetron sputtering
  • SIMS

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