A Cryogenic CMOS Low Dropout Voltage Regulator Design for Space Applications

Halil Ibrahim Kayihan, Aykut Kabaoglu, Mustafa Berke Yelten

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

In this study, a low drop-out (LDO) voltage regulator which can operate at cryogenic temperatures is designed using cryogenic transistor models of 0.18μm UMC CMOS process. The designed LDO regulator can provide a 100mA load current while generating four different digitally configurable output voltage levels (0.9V, 1.2V, 1.5V, 1.8V). The designed LDO has 92mV, 80mV, 66mV and 77mV drop-out voltages for the output voltage levels 0.9V, 1.2V, 1.5V, and 1.8 V, respectively. Output voltage level varies by ~10mV from 77K to room temperature of 300K. The post-layout simulation results of the overall LDO are presented.

Original languageEnglish
Title of host publicationELECO 2019 - 11th International Conference on Electrical and Electronics Engineering
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages392-396
Number of pages5
ISBN (Electronic)9786050112757
DOIs
Publication statusPublished - Nov 2019
Event11th International Conference on Electrical and Electronics Engineering, ELECO 2019 - Bursa, Turkey
Duration: 28 Nov 201930 Nov 2019

Publication series

NameELECO 2019 - 11th International Conference on Electrical and Electronics Engineering

Conference

Conference11th International Conference on Electrical and Electronics Engineering, ELECO 2019
Country/TerritoryTurkey
CityBursa
Period28/11/1930/11/19

Bibliographical note

Publisher Copyright:
© 2019 Chamber of Turkish Electrical Engineers.

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