A 7 GHz compact transimpedance amplifier TIA in CMOS 0.18 µm technology

Jawdat Abu-Taha; Metin Yazgi

doi:10.1007/s10470-016-0689-1

A 7 GHz compact transimpedance amplifier TIA in CMOS 0.18 µm technology

Jawdat Abu-Taha^*, Metin Yazgi

^*Corresponding author for this work

Department of Electronics and Communication Engineering

Istanbul Technical University

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

This paper describes a compact transimpedance amplifier (TIA). Based on the principle of negative impedance (NI) circuit, the proposed TIA provides wide bandwidth and low noise. The schematics and characteristics of NI circuit have been explained. The inductor behavior is synthesized by gyrator-C circuit. The TIA is implemented in 180 nm RF MOS transistors in a HV CMOS technology with 1.8 V supply voltage technology. It reaches −3 dB bandwidth of 7 GHz and transimpedance gain of 54.3 dBΩ in the presence of a 50 fF photodiode capacitance. The simulated input referred noise current spectral density is (Formula presented.). The power consumption is 29 mW. The TIA occupies (Formula presented.) of area.

Original language	English
Pages (from-to)	429-438
Number of pages	10
Journal	Analog Integrated Circuits and Signal Processing
Volume	86
Issue number	3
DOIs	https://doi.org/10.1007/s10470-016-0689-1
Publication status	Published - 1 Mar 2016

Bibliographical note

Publisher Copyright:
© 2016, Springer Science+Business Media New York.

Keywords

Active inductor (AI)
Bandwidth extension
Input-referred noise (Formula presented.)
Negative impedance (NI) circuit
Transimpedance amplifier (TIA)

Access to Document

10.1007/s10470-016-0689-1

Cite this

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abstract = "This paper describes a compact transimpedance amplifier (TIA). Based on the principle of negative impedance (NI) circuit, the proposed TIA provides wide bandwidth and low noise. The schematics and characteristics of NI circuit have been explained. The inductor behavior is synthesized by gyrator-C circuit. The TIA is implemented in 180 nm RF MOS transistors in a HV CMOS technology with 1.8 V supply voltage technology. It reaches −3 dB bandwidth of 7 GHz and transimpedance gain of 54.3 dBΩ in the presence of a 50 fF photodiode capacitance. The simulated input referred noise current spectral density is (Formula presented.). The power consumption is 29 mW. The TIA occupies (Formula presented.) of area.",

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AB - This paper describes a compact transimpedance amplifier (TIA). Based on the principle of negative impedance (NI) circuit, the proposed TIA provides wide bandwidth and low noise. The schematics and characteristics of NI circuit have been explained. The inductor behavior is synthesized by gyrator-C circuit. The TIA is implemented in 180 nm RF MOS transistors in a HV CMOS technology with 1.8 V supply voltage technology. It reaches −3 dB bandwidth of 7 GHz and transimpedance gain of 54.3 dBΩ in the presence of a 50 fF photodiode capacitance. The simulated input referred noise current spectral density is (Formula presented.). The power consumption is 29 mW. The TIA occupies (Formula presented.) of area.

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