Abstract
In this paper, a 2.7-2.9 GHz class-F power amplifier with 50-Watt output power, 75% power added efficiency (PAE), 12 dB gain and low harmonic content was designed and simulated by using CGHV40050F Gallium Nitride high electron mobility transistor (GaN HEMT) and NI AWR Microwave Office v14. Realizations are planned to be made on Rogers RT5880 dielectric material which has 0.508 mm thickness and 2.20 dielectric constant.
Original language | English |
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Title of host publication | ELECO 2019 - 11th International Conference on Electrical and Electronics Engineering |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1088-1091 |
Number of pages | 4 |
ISBN (Electronic) | 9786050112757 |
DOIs | |
Publication status | Published - Nov 2019 |
Event | 11th International Conference on Electrical and Electronics Engineering, ELECO 2019 - Bursa, Turkey Duration: 28 Nov 2019 → 30 Nov 2019 |
Publication series
Name | ELECO 2019 - 11th International Conference on Electrical and Electronics Engineering |
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Conference
Conference | 11th International Conference on Electrical and Electronics Engineering, ELECO 2019 |
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Country/Territory | Turkey |
City | Bursa |
Period | 28/11/19 → 30/11/19 |
Bibliographical note
Publisher Copyright:© 2019 Chamber of Turkish Electrical Engineers.