Abstract
This paper presents a three-stage 2-W Ka-band power amplifier (PA) operating from 24 to 28 GHz. The PA is designed using a commercially available 0.15 μ m GaAs pHEMT technology. It employs various matching network types, including cluster, bus-bar, and T-type networks. Under a 4 V supply voltage, the simulated PA exhibits a large-signal gain of more than 16 dB and achieves a saturated output power exceeding 2 W, with a power-added efficiency (PAE) exceeding 24% at the 3 -dB compression point. The small-signal gain has a flat response with less than ± 1 ripple. The input and output return losses are lower than -6 dB and -12 dB, respectively. The occupied chip area is 7.3
| Original language | English |
|---|---|
| Title of host publication | 2025 33rd Telecommunications Forum, TELFOR 2025 - Proceedings of Papers |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9798331593575 |
| DOIs | |
| Publication status | Published - 2025 |
| Externally published | Yes |
| Event | 33rd Telecommunications Forum, TELFOR 2025 - Belgrade, Serbia Duration: 25 Nov 2025 → 26 Nov 2025 |
Publication series
| Name | 2025 33rd Telecommunications Forum, TELFOR 2025 - Proceedings of Papers |
|---|
Conference
| Conference | 33rd Telecommunications Forum, TELFOR 2025 |
|---|---|
| Country/Territory | Serbia |
| City | Belgrade |
| Period | 25/11/25 → 26/11/25 |
Bibliographical note
Publisher Copyright:© 2025 IEEE.
Keywords
- 0.15 μm GaAs pHEMT
- broadband amplifiers
- Ka-Band
- MMIC
- PA
- power amplifier
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