Abstract
This letter presents the measurement results of a 180-nm complementary metal-oxide-semiconductor (CMOS) X -band low-noise amplifier (LNA) at both 77 and 300 K. The designed LNA provides S11 and S22 below -10 dB at both temperatures within 6.4-7.4 GHz band. At 300 K, the voltage gain of the designed LNA is higher than 12.5 dB, and it provides an average noise temperature of 275 K, as well as -1 dBm IIP3. At 77 K, the LNA has approximately an 18-dB voltage gain, 78-K noise figure (NF), and -3 dBm IIP3. The presented work is the first implemented X -band cryogenic CMOS LNA in the literature.
| Original language | English |
|---|---|
| Article number | 9043508 |
| Pages (from-to) | 395-398 |
| Number of pages | 4 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 30 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 2020 |
Bibliographical note
Publisher Copyright:© 2001-2012 IEEE.
Funding
Manuscript received February 11, 2020; accepted March 4, 2020. Date of publication March 19, 2020; date of current version April 8, 2020. This work was supported by the Technological Research Council of Turkey under the project TÜB˙TAK 1001 215E080. (Corresponding author: Mustafa Berke Yelten.) Alican Çag˘lar was with the Department of Electronics and Communications Engineering, Istanbul Technical University, 34467 Istanbul, Turkey. He is now with IMEC-BEIOT, 3001 Leuven, Belgium (e-mail: [email protected]).
| Funders | Funder number |
|---|---|
| Technological Research Council of Turkey | TÜB˙TAK 1001 215E080 |
Keywords
- Complementary metal-oxide-semiconductor (CMOS)
- cryogenics
- linearity
- low-noise amplifier (LNA)