Abstract
A 7 GHz X-band low noise amplifier for space applications is designed using 0.18 μm UMC CMOS Mixed-Mode/RF technology. The LNA is designed for being tested at temperatures below 100 K (also called cryogenic temperatures) and under radiation. Inductively degenerated cascode topology is used and an extra bias inductor has been added to improve input matching. Designed CMOS LNA achieves a voltage gain higher than 15 dB, noise figure of 2.6 dB, IIP3 of -2.4 dBm while consuming 25 mW of power.
| Original language | English |
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| Title of host publication | Proceedings - 2017 1st New Generation of CAS, NGCAS 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 205-208 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781509064472 |
| DOIs | |
| Publication status | Published - 26 Sept 2017 |
| Event | 1st New Generation of CAS, NGCAS 2017 - Genova, Italy Duration: 6 Sept 2017 → 9 Sept 2017 |
Publication series
| Name | Proceedings - 2017 1st New Generation of CAS, NGCAS 2017 |
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Conference
| Conference | 1st New Generation of CAS, NGCAS 2017 |
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| Country/Territory | Italy |
| City | Genova |
| Period | 6/09/17 → 9/09/17 |
Bibliographical note
Publisher Copyright:© 2017 IEEE.
Funding
This work was sponsored by the Technological Research Council of Turkey under the project TÜB TAK 1001 215E080 and stanbul Technical University Department of Scientific Research Projects under the project 39465.
| Funders | Funder number |
|---|---|
| Technological Research Council of Turkey | TÜB TAK 1001 215E080, 39465 |
Keywords
- Complementary metal oxide semiconductor (CMOS)
- Cryogenic
- Low noise amplifier (LNA)
- Noise figure
- Radiation