1-8 GHz high efficiency single-stage travelling wave power amplifier

Mustafa Sayginer; Metin Yazgi; H. Hakan Kuntman; Bal S. Virdee

doi:10.1007/s10470-012-9863-2

1-8 GHz high efficiency single-stage travelling wave power amplifier

Mustafa Sayginer^*, Metin Yazgi, H. Hakan Kuntman, Bal S. Virdee

^*Corresponding author for this work

Department of Electronics and Communication Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

This paper describes a Class-A/AB wideband power amplifier that comprises of a single-stage transistor travelling wave structure in which capacitive coupling and frequency dependent lossy artificial-line are employed at the input of the active device. The proposed technique significantly enhances the amplifier's gain-bandwidth product, input match and gain flatness performance. To ensure the amplifier delivers a predefined power to the load over its entire operating band 2-to-8 GHz a broadband load-pull technique was applied at the output of the amplifier. To avoid reduction in the amplifier's bandwidth resulting from parasitic capacitive effects associated with the off-chip choke inductor a wideband RF choke was designed. The 1.31 × 2.93 mm² power amplifier was fabricated using 0.25 μm GaAs pHEMT MMIC process. The measurement results show that the proposed amplifier delivers an average P _sat of 29.5 dBm and P _{out,1 dB} of 26 dBm, and the corresponding PAE levels are 55 and 35 % for the P _sat and P _{out,1 dB}, respectively.

Original language	English
Pages (from-to)	111-119
Number of pages	9
Journal	Analog Integrated Circuits and Signal Processing
Volume	74
Issue number	1
DOIs	https://doi.org/10.1007/s10470-012-9863-2
Publication status	Published - Jan 2013

Funding

Acknowledgment The authors wish to acknowledge the assistance and support of The Scientific and Technological Research Council of Turkey (TUBITAK Project-1001-107E253).

Funders	Funder number
TUBITAK	Project-1001-107E253
Türkiye Bilimsel ve Teknolojik Araştirma Kurumu

Keywords

GaAs PHEMT
Load-pull technique
Wideband power amplifiers

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10.1007/s10470-012-9863-2

Cite this

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title = "1-8 GHz high efficiency single-stage travelling wave power amplifier",

abstract = "This paper describes a Class-A/AB wideband power amplifier that comprises of a single-stage transistor travelling wave structure in which capacitive coupling and frequency dependent lossy artificial-line are employed at the input of the active device. The proposed technique significantly enhances the amplifier's gain-bandwidth product, input match and gain flatness performance. To ensure the amplifier delivers a predefined power to the load over its entire operating band 2-to-8 GHz a broadband load-pull technique was applied at the output of the amplifier. To avoid reduction in the amplifier's bandwidth resulting from parasitic capacitive effects associated with the off-chip choke inductor a wideband RF choke was designed. The 1.31 × 2.93 mm2 power amplifier was fabricated using 0.25 μm GaAs pHEMT MMIC process. The measurement results show that the proposed amplifier delivers an average P sat of 29.5 dBm and P out,1 dB of 26 dBm, and the corresponding PAE levels are 55 and 35 \% for the P sat and P out,1 dB, respectively.",

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AU - Kuntman, H. Hakan

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N2 - This paper describes a Class-A/AB wideband power amplifier that comprises of a single-stage transistor travelling wave structure in which capacitive coupling and frequency dependent lossy artificial-line are employed at the input of the active device. The proposed technique significantly enhances the amplifier's gain-bandwidth product, input match and gain flatness performance. To ensure the amplifier delivers a predefined power to the load over its entire operating band 2-to-8 GHz a broadband load-pull technique was applied at the output of the amplifier. To avoid reduction in the amplifier's bandwidth resulting from parasitic capacitive effects associated with the off-chip choke inductor a wideband RF choke was designed. The 1.31 × 2.93 mm2 power amplifier was fabricated using 0.25 μm GaAs pHEMT MMIC process. The measurement results show that the proposed amplifier delivers an average P sat of 29.5 dBm and P out,1 dB of 26 dBm, and the corresponding PAE levels are 55 and 35 % for the P sat and P out,1 dB, respectively.

AB - This paper describes a Class-A/AB wideband power amplifier that comprises of a single-stage transistor travelling wave structure in which capacitive coupling and frequency dependent lossy artificial-line are employed at the input of the active device. The proposed technique significantly enhances the amplifier's gain-bandwidth product, input match and gain flatness performance. To ensure the amplifier delivers a predefined power to the load over its entire operating band 2-to-8 GHz a broadband load-pull technique was applied at the output of the amplifier. To avoid reduction in the amplifier's bandwidth resulting from parasitic capacitive effects associated with the off-chip choke inductor a wideband RF choke was designed. The 1.31 × 2.93 mm2 power amplifier was fabricated using 0.25 μm GaAs pHEMT MMIC process. The measurement results show that the proposed amplifier delivers an average P sat of 29.5 dBm and P out,1 dB of 26 dBm, and the corresponding PAE levels are 55 and 35 % for the P sat and P out,1 dB, respectively.

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1-8 GHz high efficiency single-stage travelling wave power amplifier

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Keywords

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