1-8 GHz high efficiency single-stage travelling wave power amplifier

Mustafa Sayginer*, Metin Yazgi, H. Hakan Kuntman, Bal S. Virdee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


This paper describes a Class-A/AB wideband power amplifier that comprises of a single-stage transistor travelling wave structure in which capacitive coupling and frequency dependent lossy artificial-line are employed at the input of the active device. The proposed technique significantly enhances the amplifier's gain-bandwidth product, input match and gain flatness performance. To ensure the amplifier delivers a predefined power to the load over its entire operating band 2-to-8 GHz a broadband load-pull technique was applied at the output of the amplifier. To avoid reduction in the amplifier's bandwidth resulting from parasitic capacitive effects associated with the off-chip choke inductor a wideband RF choke was designed. The 1.31 × 2.93 mm2 power amplifier was fabricated using 0.25 μm GaAs pHEMT MMIC process. The measurement results show that the proposed amplifier delivers an average P sat of 29.5 dBm and P out,1 dB of 26 dBm, and the corresponding PAE levels are 55 and 35 % for the P sat and P out,1 dB, respectively.

Original languageEnglish
Pages (from-to)111-119
Number of pages9
JournalAnalog Integrated Circuits and Signal Processing
Issue number1
Publication statusPublished - Jan 2013


Acknowledgment The authors wish to acknowledge the assistance and support of The Scientific and Technological Research Council of Turkey (TUBITAK Project-1001-107E253).

FundersFunder number
Türkiye Bilimsel ve Teknolojik Araştirma Kurumu


    • GaAs PHEMT
    • Load-pull technique
    • Wideband power amplifiers


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