0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi

Mustafa Sayginer; Metin Yazgi; Hakan Kuntman

doi:10.1109/SIU.2011.5929783

0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi

Translated title of the contribution: 0.1 - 10 GHz 0.5W high efficiency single transistor GaAs pHEMT power amplifier design using load-pull simulations

Mustafa Sayginer^*, Metin Yazgi, Hakan Kuntman

^*Corresponding author for this work

Department of Electronics and Communication Engineering

Istanbul Technical University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Citations (Scopus)

Abstract

In this study, a linear single transistor power amplifier with 0.1 - 10 GHz, 0.5W output power at 1dB compression point (P1dB) and >45% power added efficiency (PAE) is designed. By using a graphical load-pull approach to obtain uniform distrubution for both P_1dB and PAE, it is showed that the designed amplifier has its advantage over a classical load line mathched amplifier. UMS 900mW/mm 0.25μm GaAs pHEMT technology and ADS design environment is used to fullfill overall design and simulations.

Translated title of the contribution	0.1 - 10 GHz 0.5W high efficiency single transistor GaAs pHEMT power amplifier design using load-pull simulations
Original language	Turkish
Title of host publication	2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011
Pages	841-844
Number of pages	4
DOIs	https://doi.org/10.1109/SIU.2011.5929783
Publication status	Published - 2011
Event	2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011 - Antalya, Turkey Duration: 20 Apr 2011 → 22 Apr 2011

Publication series

Name	2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011

Conference

Conference	2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011
Country/Territory	Turkey
City	Antalya
Period	20/04/11 → 22/04/11

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10.1109/SIU.2011.5929783

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Sayginer, M., Yazgi, M., & Kuntman, H. (2011). 0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi. In 2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011 (pp. 841-844). Article 5929783 (2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011). https://doi.org/10.1109/SIU.2011.5929783

Sayginer, Mustafa ; Yazgi, Metin ; Kuntman, Hakan. / 0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi. 2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011. 2011. pp. 841-844 (2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011).

@inproceedings{ef9de6352af24b7dbce18f1f3c1ae5d5,

title = "0.1 - 10 GHz 0.5W y{\"u}ksek ver{\.i}ml{\.i} tek trans{\.i}st{\"o} rl{\"u} GaAs pHEMT g{\"u}{\c c} kuvvetlend{\.i}r{\.i}c{\.i}s{\.i}n{\.l} n y{\"u}k taramasi y{\"o}ntem{\.i} kullanilarak tasarimi",

abstract = "In this study, a linear single transistor power amplifier with 0.1 - 10 GHz, 0.5W output power at 1dB compression point (P1dB) and >45% power added efficiency (PAE) is designed. By using a graphical load-pull approach to obtain uniform distrubution for both P1dB and PAE, it is showed that the designed amplifier has its advantage over a classical load line mathched amplifier. UMS 900mW/mm 0.25μm GaAs pHEMT technology and ADS design environment is used to fullfill overall design and simulations.",

author = "Mustafa Sayginer and Metin Yazgi and Hakan Kuntman",

year = "2011",

doi = "10.1109/SIU.2011.5929783",

language = "T{\"u}rk{\c c}e",

isbn = "9781457704635",

series = "2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011",

pages = "841--844",

booktitle = "2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011",

note = "2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011 ; Conference date: 20-04-2011 Through 22-04-2011",

}

Sayginer, M, Yazgi, M & Kuntman, H 2011, 0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi. in 2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011., 5929783, 2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011, pp. 841-844, 2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011, Antalya, Turkey, 20/04/11. https://doi.org/10.1109/SIU.2011.5929783

0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi. / Sayginer, Mustafa; Yazgi, Metin; Kuntman, Hakan.
2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011. 2011. p. 841-844 5929783 (2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yazgi, Metin

AU - Kuntman, Hakan

PY - 2011

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N2 - In this study, a linear single transistor power amplifier with 0.1 - 10 GHz, 0.5W output power at 1dB compression point (P1dB) and >45% power added efficiency (PAE) is designed. By using a graphical load-pull approach to obtain uniform distrubution for both P1dB and PAE, it is showed that the designed amplifier has its advantage over a classical load line mathched amplifier. UMS 900mW/mm 0.25μm GaAs pHEMT technology and ADS design environment is used to fullfill overall design and simulations.

AB - In this study, a linear single transistor power amplifier with 0.1 - 10 GHz, 0.5W output power at 1dB compression point (P1dB) and >45% power added efficiency (PAE) is designed. By using a graphical load-pull approach to obtain uniform distrubution for both P1dB and PAE, it is showed that the designed amplifier has its advantage over a classical load line mathched amplifier. UMS 900mW/mm 0.25μm GaAs pHEMT technology and ADS design environment is used to fullfill overall design and simulations.

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T3 - 2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011

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Sayginer M, Yazgi M, Kuntman H. 0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi. In 2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011. 2011. p. 841-844. 5929783. (2011 IEEE 19th Signal Processing and Communications Applications Conference, SIU 2011). doi: 10.1109/SIU.2011.5929783

0.1 - 10 GHz 0.5W yüksek veri̇mli̇ tek transi̇stö rlü GaAs pHEMT güç kuvvetlendi̇ri̇ci̇si̇nl̇ n yük taramasi yöntemi̇ kullanilarak tasarimi

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